Radiation-induced surface smoothing and structural relaxation in electron-irradiated ZnS and ZnSe crystals
Радиационно-индуцированное сглаживание поверхности и структурная релаксация в облучённых электронами кристаллах ZnS и ZnSe

Additional data

Submitted: 17.06.2026; Accepted: 14.08.2026; Published 11.09.2026;
Views: 36; Downloaded: 8

How to Cite

M. Yu. Tashmetov, B. N. Madaminov "Radiation-induced surface smoothing and structural relaxation in electron-irradiated ZnS and ZnSe crystals" Natural Sci. Rev. 3 200804 (2026)
https://doi.org/10.54546/NaturalSciRev.200804
BibTex
M. Yu. Tashmetov1, B. N. Madaminov1,a
  • 1Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
  • amadaminov.b@inp.uz
DOI: 10.54546/NaturalSciRev.200804
Keywords: ZnS crystal, ZnSe crystal, electron irradiation, surface smoothing, surface roughness, structural relaxation
Topics: Physics , Condensed Matter Physics (Experiment) , Condensed Matter Physics (Theory) , 70th anniversary of JINR
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Abstract

The evolution of surface morphology and structural parameters in ZnS and ZnSe crystals under highenergy electron irradiation was investigated using a phenomenological modeling approach based on experimentally obtained irradiation-dependent structural and morphological data. The analysis focused on the fluence dependence of the surface roughness parameters Ra and Rz, coherent-domain size, and lattice parameter in the electron fluence range of (0−2.5) · 1017 electrons/cm2. It was found that the surface roughness parameters Ra and Rz decrease according to an exponential law, indicating the occurrence of radiation-induced surface smoothing. A phenomenological kinetic equation describing roughness relaxation as a function of electron fluence was proposed and solved analytically. The obtained model demonstrates that the smoothing rate is proportional to the excess surface roughness relative to the limiting relaxed state. In contrast, the coherent-domain size generally increases with increasing fluence, whereas the lattice parameter decreases nearly linearly, indicating radiation-induced structural relaxation, lattice compaction, and defect rearrangement processes. Comparative analysis of ZnS and ZnSe crystals revealed differences in the smoothing kinetics and structural evolution parameters, which may be associated with differences in defect mobility and irradiation-assisted relaxation processes. Correlations were observed between the fluence-dependent evolution of surface roughness and bulk structural parameters, indicating concurrent morphological and structural changes under electron irradiation. The proposed phenomenological description provides a framework for comparing these irradiation-induced responses in ZnS and ZnSe crystals.

Acknowledgements

This research was funded by the Uzbekistan Academy of Sciences within the framework of the 2026 scientific research program of the Institute of Nuclear Physics under the projects entitled “Investigation of the Structure, Dynamics, and Internal Structural Features of Functional Materials, Nanosystems, Geological Objects, and Cultural Heritage Objects” and “Optimization of the Electrophysical and Physicomechanical Properties of AIIIB V and AIIB VI Semiconductor Compounds by Thermoradiation Technology.”

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